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| SSM95T07GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant D BVDSS RDS(ON) ID 75V 5m 80A G S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercialindustrial power applications and suited for low voltage applications such as DC/DC converters. G D TO-220(P) S ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 Rating 75 20 80 70 320 300 2 4 Units V V A A A W W/ mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 450 -55 to 175 -55 to 175 THERMAL DATA Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.5 62 Units /W /W 07/11/2007 Rev.1.00 www.SiliconStandard.com 1 SSM95T07GP ELECTRICAL CHARACTERISTICS (TJ=25 C unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25oC) Drain-Source Leakage Current (T j=150oC) Test Conditions VGS=0V, ID=1mA VGS=10V, ID=60A VDS=VGS, ID=250uA VDS=10V, ID=60A VDS=75V, VGS=0V VDS=60V ,VGS=0V VGS= 20V ID=80A VDS=40V VGS=10V VDS=40V ID=80A RG=3.3,VGS=10V RD=0.5 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min. 75 2 - Typ. 0.01 57 85 25 36 22 160 38 165 985 390 1.2 Max. Units 5 4 10 250 100 135 1.8 V V/ m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 4290 6870 SOURCE-DRAIN DIODE Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=60A, VGS=0V IS=40A, VGS=0V dI/dt=100A/s Min. - Typ. 75 190 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A, calculated continuous current based on maximum allowable junction temperature is 169A. 4.Starting Tj=25oC , L=1mH , IAS=30A. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 07/11/2007 Rev.1.00 www.SiliconStandard.com 2 SSM95T07GP 250 120 T C = 25 C 200 o ID , Drain Current (A) ID , Drain Current (A) 10 V 9.0 V 8.0 V 7.0 V T C = 1 75 C 100 o 80 10V 9.0V 8.0V 7.0V V G = 6.0 V 150 60 100 V G = 6.0 V 50 40 20 0 0 1 2 3 4 0 0 1 2 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 12 2.4 I D =30A T C =25 C 10 o I D =60A V G =10V 2.0 RDS(ON) (m) Normalized RDS(ON) 4 5 6 7 8 9 10 1.6 8 1.2 6 0.8 4 0.4 -50 0 50 100 150 200 V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 60 50 1.2 40 T j =175 C T j =25 C Normalized VGS(th) (V) 1.2 1.4 o o IS(A) 1 30 0.8 20 0.6 10 0 0 0.2 0.4 0.6 0.8 1 0.4 -50 0 50 100 150 200 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode 07/11/2007 Rev.1.00 Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 www.SiliconStandard.com SSM95T07GP f=1.0MHz 14 10000 VGS , Gate to Source Voltage (V) I D = 80 A 12 10 V DS = 40 V V DS = 48 V V DS = 64 V C (pF) 1000 C iss 8 C oss C rss 6 4 2 0 0 20 40 60 80 100 120 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100us 100 0.2 ID (A) 0.1 1ms 10ms 10 0.1 0.05 0.02 0.01 PDM t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C T c =25 o C Single Pulse 1 0.1 1 10 100ms DC Single Pulse 0.01 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform 07/11/2007 Rev.1.00 Fig 12. Gate Charge Waveform 4 www.SiliconStandard.com SSM95T07GP Package Outline : TO-220 E1 E L2 A SYMBOLS Millimeters MIN NOM MAX L1 A 4.25 0.65 1.15 0.40 1.00 9.70 -----12.70 2.60 1.00 2.6 14.70 6.30 3.50 8.40 4.48 0.80 1.38 0.50 1.20 10.00 --2.54 13.60 2.80 1.40 3.10 15.50 6.50 3.60 8.90 4.70 0.90 1.60 0.60 1.40 10.40 11.50 ---14.50 3.00 1.80 3.6 16 6.70 3.70 9.40 L5 c1 b b1 c c1 E E1 D L4 e L L1 L2 L3 L4 L5 L3 b1 L D b c 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-220 Part Number Package Code XXXXXGP meet Rohs requirement LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 07/11/2007 Rev.1.00 www.SiliconStandard.com 5 SSM95T07GP Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 07/11/2007 Rev.1.00 www.SiliconStandard.com 6 |
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